Optimization of the longitudinal structure of intrinsic layer in microcrystalline silicon germanium solar cell

作者：Cao Yu; Zhang Jian Jun^*; Li Tian Wei; Huang Zhen Hua; Ma Jun; Ni Jian; Geng Xin Hua; Zhao Ying

来源：Acta Physica Sinica, 2013, 62(3): 036102.

DOI：10.7498/aps.62.036102

• microcrystalline silicon germanium
• discharge power
• band gap modulation
• solar cell

Using radio-frequency plasma enhanced chemical vapor deposition, based on the influences of discharge power on structural and photoelectric properties of mu c-SiGe:H thin films, RF power profiling technique is developed during the deposition of mu c-SiGe:H intrinsic layer. The optimized mu c-SiGe:H intrinsic layer not only maintains homogeneity of the crystalline volume fraction along the depth profile, but also forms a band gap profiling configuration from wide to narrow in the direction of growth. By this method, the fill factor and the short-circuit current density of mu c-SiGe:H solar cell are significantly improved, and an efficiency of 9.54% for the a-Si:H/mu c-SiGe:H tandem solar cell is achieved.

• 出版日期2013
• 单位南开大学