Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

作者：Bertolazzi, Simone; Krasnozhon, Daria; Kis, Andras^*

来源：ACS Nano, 2013, 7(4): 3246-3252.

DOI：10.1021/nn3059136

• two-dimensional materials
• dichalcogenides
• MoS2
• graphene
• nanoelectronics
• memory
• heterostructures

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all 20 transistor is further Integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 20 nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration.

• 出版日期2013-4
• 单位中国科学院电工研究所