摘要
Microwave-assisted successive ionic layer adsorption and reaction was employed to synthesize Sn-ZnO (tin-doped zinc oxide), and its sensitivity to ultraviolet radiation is compared with zinc oxide (ZnO). The sensing films were made by the dip-coated method on an indium titanium oxide glass substrate, and the sensing performance was monitored using the 300-700 nm wavelength of UV-Vis light. Excellent sensitivity and recovery were observed for the Sn-doped ZnO sensor device, especially at 380 nm wavelength of ultraviolet (UV) light (response and recovery time 2.26 s and 8.63 s, respectively, at 5 V bias voltage). The variation in photocurrent with respect to dark and light illumination atmosphere was well illustrated based on the Schottky and inter-particle network effects. Doping of Sn on ZnO nanoparticles varied the surface roughness and crystallite size as observed from scanning electron microscopic and x-ray diffraction studies. Here, we demonstrate a simple and economical fabrication technique for designing a high-performance UV light sensor. The developed device works at room temperature with high durability and stability.
- 出版日期2017-11