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摘要
This review focuses on in situ functionalization of gallium nitride (GaN) with different adsorbates in the presence of an etchant. The low-temperature aqueous nature of this process provides a safe, environmentally friendly technique for tailoring the semiconductor's properties for various applications. Surface binding to GaN relies on a native oxide layer or direct attachment to the metal center present on the etched surface. The specifics of the binding mechanism are based on the functional groups present on the adsorbate. The effects of the GaN surface polarity and quality on the modification approach are analyzed. The review summarizes the alteration of GaN properties after the in situ treatment. Quantitative data until now have shown changes in morphological, surface chemical, optical, electronic, and aqueous stability properties. The review concludes with a short outlook on future studies associated with this surface modification approach.
- 出版日期2015-10-14
