科研之友
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摘要
We report the demonstration of a silicon radio-frequency single electron transistor. The island is defined by electrostatically tunable tunnel barriers in a narrow channel field effect transistor. Charge sensitivities of better than 10 mu e/root Hz are demonstrated at megahertz bandwidth. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers.
- 出版日期2008-3-17
