A Novel Level Shifter Employing IGZO TFT

作者：Kim Binn^*; Choi Seung Chan; Kuk Seung Hee; Jang Yong Ho; Park Kwon Shik; Kim Chang Dong; Han Min Koo

来源：IEEE Electron Device Letters, 2011, 32(2): 167-169.

DOI：10.1109/LED.2010.2093505

• Depletion mode
• indium-gallium-zinc-oxide thin-film transistor (IGZO TFT)
• level shifter

A new level shifter employing indium-gallium-zinc-oxide thin-film transistor (IGZO TFT) for a display panel was proposed and successfully fabricated. Two clock signals with 180 degrees. out of phase and a discharging TFT were employed to obtain a full-swing output. The IGZO level shifter has successfully exhibited a wide swing output from VDD to VSS without any additional power sources and input signals. The power consumption is 0.30 mW at a clock frequency of 12.5 kHz. The proposed level shifter with a depletion-mode device would be an important building block for an oxide TFT display.

• 出版日期2011-2