Annealing Effect in GaDyN on Optical and Magnetic Properties

作者：Zhou Yi Kai^*; Takahashi Masahiro; Emura Shuichi; Hasegawa Shigehiko; Asahi Hajime

来源：Journal of Superconductivity and Novel Magnetism, 2010, 23(1): 103-105.

DOI：10.1007/s10948-009-0578-2

• GaN-based diluted magnetic semiconductor
• GaDyN
• Ferromagnetism
• Photoluminescence
• Molecular beam epitaxy
• Defects

The annealing effect on the optical and magnetic properties of the GaDyN layers was studied. The PL intensities of yellow and green bands as well as the intra-4f orbital transition of Dy(3+) ions were found to decrease for the samples annealed at 900 and 1000 A degrees C. It is supposed that the intra-4f orbital transition is related to the broad peak luminescence coming from defects. Increasing the annealing temperature, the magnetization becomes smaller. It is considerable that the number of electrons coming from defects was reduced by the annealing treatments and that the ferromagnetism in GaDyN is attributed as carrier induced ferromagnetism.

• 出版日期2010-1