摘要
In this article, a new highly efficient and highly stable I kW power amplifier is designed and fabricated for plasma processing applications. The efficiency of the generator was Unproved by using a class-E type power amplifier consisting of one push-pull MOSFET and a high-current driver IC instead of a conventional class-C amplifier composed of several single ended MOSFETs. A switchable damper allows a selection of one of three different amplifier modes; these modes adjust the amplifier's efficiency and stability. The amplifier dimensions were reduced by 30% compared with the conventional class-C power amplifier. Also, a drain efficiency of 80% was produced for a generator output power of I kW and operating frequency of 13.56 MHz.
- 出版日期2010-11