An Improved UU-MESFET with High Power Added Efficiency

作者：Jia, Hujun^*; Hu, Mei; Zhu, Shunwei

来源：Micromachines, 2018, 9(11): 573.

DOI：10.3390/mi9110573

• 4H-SiC
• MESFET
• ultrahigh upper gate height
• power added efficiency

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 m and 0.2 m for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 m, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

• 出版日期2018-11
• 单位西安电子科技大学