An analytical approach for physical modeling of hot-carrier induced degradation

作者：Tyaginov S^*; Starkov I; Enichlmair H; Jungemann Ch; Park J M; Seebacher E; Orio R; Ceric H; Grasser T

来源：Microelectronics Reliability, 2011, 51(9-11): 1525-1529.

DOI：10.1016/j.microrel.2011.07.089

We develop an analytical model for hot-carrier degradation based on a rigorous physics-based TCAD model. The model employs an analytical approximation of the carrier acceleration integral (calculated with our TCAD approach) by a fitting formula. The essential features of hot-carrier degradation such as the interplay between single-and multiple-electron components of Si-H bond dissociation, mobility degradation during interface state build-up, as well as saturation of degradation at long stress times are inherited. As a result, the change of the linear drain current can be represented by the analytical expression over a wide range of stress conditions. The analytical model can be used to study the impact of device geometric parameters on hot-carrier degradation.

• 出版日期2011-11