A SIX-PHASE DIVIDE-BY-3 INJECTION LOCKED FREQUENCY DIVIDER IN SiGe BiCMOS TECHNOLOGY

作者：Jang Sheng Lyang^*; Shen Kuan Chun; Chang Chia Wei; Juang Miin Horng

来源：Microwave and Optical Technology Letters, 2009, 51(6): 1555-1557.

DOI：10.1002/mop.24345

• SiGe HBT BiCMOS
• six-phase
• divide-by-3 injection-locked frequency divider
• locking range
• ring-oscillator

This article presents a six-phase silicon-germanium (SiGe) heterojunction bipolar transistor divide-by-3 injection locked frequency divider (ILFD). The ILFD is based on a three-stage differential ring oscillator (voltage controlled oscillators) and was fabricated in the 0.35 mu m SiGe 3P3M BiCMOS technology. The divide-by-3 function is performed by injecting a differential signal to the common gates of injection MOSFETs with the drain/sources connected to the VCO outputs. Measurement results show, that when the supply voltage V(dd) is tuned from 1.4 V to 2 V, the divider free-running oscillation frequency is tunable front 6.2 GHz to 3.58 GHz., and at the incident power of 0 dBm the operation locking range is about 8.3 GHz, from the incident frequency 18.8 to 10.5 GHz. The core power consumption is 8.96 mW at V(dd) = 1.4 V The die area is 0.802 x 0.812 mm(2).

• 出版日期2009-6