Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation

作者：Privat A^*; Touboul A D; Michez A; Bourdarie S; Vaille J R; Wrobel F; Arinero R; Chatry N; Chaumont G; Lorfevre E; Saigne F

来源：IEEE Transactions on Nuclear Science, 2013, 60(6): 4166-4174.

DOI：10.1109/TNS.2013.2287974

• Heavy ion
• latent defect
• post-irradiation-gate-stress
• power MOSFET
• reliability
• SEGR

Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defect formation. This work addresses the limits of the post-irradiation gate stress relevance used for Power MOSFETs space qualification.

• 出版日期2013-12