A Modified Approach to Determine the Hall Parameters of Epitaxial GaSb Grown on a Conductive GaSb Substrate

作者：Noh S K^*; Kim J O; Lee S J

来源：Journal of the Korean Physical Society, 2009, 55(4): L1331-L1334.

DOI：10.3938/jkps.55.1331

• Junction Hall effect measurement (JHEM)
• Hall parameters
• Conductive substrate
• P-n junction
• Gallium arsenide (GaAs)
• Gallium antimonide (GaSb)

A modified approach, a junction Hall-effect measurement (JHEM), is tried. This is a Hall-effect measurement that is effective in determining the Hall parameters of epitaxial layers grown on conductive substrates with no use of an insultion layer or a semi-insulating (SI) substrate by applying a built-in potential barrier to electrical isolation. Prior to examination of GaSb, the utility of the JHEM was proven by comparing the Hall parameters taken from a series of epitaxial GaAs n-p junctions with those taken from an equivalent n-GaAs epilayer grown on a SI-GaAs substrate. Using the JHEM approach, finally, we directly determine the Hall parameters of an epitaxial p-GaSb layer grown on a conductive n-GaSb substrate.

• 出版日期2009-10