Development of the Pixel OR SOI detector for high energy physics experiments

作者：Ono Y^*; Ishikawa A; Yamamoto H; Arai Y; Tsuboyama T; Onuki Y; Iwata A; Imamura T; Ohmoto T

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2013, 731: 266-269.

DOI：10.1016/j.nima.2013.06.044

• SOI
• Pixel detector
• High energy physics experiment

A Silicon-On-Insulator (SOI) Technology is suitable for vertex detectors for high energy physics experiments since complex functions can be fabricated on the SOI wafer with a small amount of material thanks to the monolithic structure. We developed a new sensor processing scheme "PIXOR(PIXel OR) for pixel detectors using a LAPIS 0.20 mu m SOI process.
An analog signal from each pixelated sensor is divided into two dimensional directions, and 2n signal channels from a small n by n pixel matrix are ORed as n column and n row channels, then the signals are processed by a readout circuit in each small matrix. This PIXOR scheme reduces the number of readout channels and avoids a deterioration of intrinsic position resolution due to large circuit area, that was a common issue for monolithic detectors. This feature allows high resolution, low occupancy and on-sensor signal processing at the same time. We present the successful results of the PIXOR readout scheme using a first prototype.

• 出版日期2013-12-11