Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-Hg1-x Cd (x) Te (x=0.23) in a Wide Temperature Range

作者：Voitsekhovskii A V^*; Nesmelov S N; Dzyadukh S M; Vasil'ev V V; Varavin V S; Dvoretskii S A; Deikhailov N N; Kuz'min V D; Remesnik V G

来源：Russian Physics Journal, 2014, 57(4): 536-544.

DOI：10.1007/s11182-014-0272-0

• MIS structure
• HgCdTe
• total conductance
• molecular beam epitaxy
• the space charge region

Total conductance of MIS structures based on heteroepitaxial n-Hg1-xCdxTe (x = 0.23) grown by molecular beam epitaxy has been studied in the temperature range 8-150 K at frequencies of alternating test signal 2 kHz - 2 MHz. It is found that for structures with a near-surface graded-gap layer and an increased content of CdTe, the differential resistance of space charge region increases significantly, as the temperature decreases from 77 to 8 K, and for structures without a graded-gap layer, the changes in the differential resistance of space charge region are nonmonotonic and relatively small. These results can be explained by the fact that at 8-77 K, for structures without graded-gap layers, the differential resistance of the space charge region is limited by tunneling via deep levels, and for structures with graded-gap layers, it is limited by the Shockley-Read generation processes.

• 出版日期2014-8