科研之友
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摘要
Non-volatile state-modulated resistive switching memory devices hold great promise for the next generation of memory chips. Herein we demonstrate the high resistance switching performance of an Ag/alpha-Fe2O3/FTO device made using a facile hydrothermal process to grow an alpha-Fe2O3 nanorod array on a fluorine-doped tin oxide substrate ( FTO). The resistive switching behavior can be effectively controlled using white-light irradiation. In particular, the device possesses an OFF/ON-state resistance ratio of similar to 10(4) with exceptional stability at room temperature. Our experimental results suggest that the resistive switching effect in the Ag/alpha-Fe2O3/FTO system mainly results from the formation of conductive filaments inside the alpha-Fe2O3 nanorods. This study not only demonstrates the great potential to explore new chemistry with tailored nanostructures for high resistive switching performance, but also sheds light on its important practical applications in nonvolatile multistate memory devices.
