摘要
<jats:p>The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples—an as-deposited sample and two samples post-annealed in N<jats:sub>2</jats:sub> gas and N<jats:sub>2</jats:sub>–H<jats:sub>2</jats:sub> gas mixture—were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N<jats:sub>2</jats:sub> and H<jats:sub>2</jats:sub> gases shows the lowest sheet resistance of 301.3 Ω/□ and a high UV transmittance of 87.1% at 300 nm.</jats:p>
- 出版日期2015-10