Direct synthesis of SiC nanowires by multiple reaction VS growth

作者：Du X W^*; Zhao X; Jia S L; Lu Y W; Li J J; Zhao N Q

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2007, 136(1): 72-77.

DOI：10.1016/j.mseb.2006.09.005

• SiC
• nanowires
• synthesis

beta-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10-30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO2 composite nanowires, formed at higher temperature (the holding stage) and lower temperature (the cooling stage), respectively. A multiple-reaction model was proposed to explain the formation of SiC nanowires.

• 出版日期2007-1-15
• 单位天津大学