Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation

作者：Pahwa Girish^*; Dutta Tapas; Agarwal Amit; Khandelwal Sourabh; Salahuddin Sayeef; Hu Chenming; Chauhan Yogesh Singh

来源：IEEE Transactions on Electron Devices, 2016, 63(12): 4986-4992.

DOI：10.1109/TED.2016.2614436

• Compact modeling
• ferroelectric
• negative capacitance
• negative capacitance FET (NCFET)
• negative differential resistance (NDR)
• temperature effects
• transients

In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities

• 出版日期2016-12