Auger recombination in InN thin films

作者：Jang, D J^*; Lin, G T; Hsiao, C L; Tu, L W; Lee, M E

来源：Applied Physics Letters, 2008, 92(4): 042101.

DOI：10.1063/1.2837537

Auger recombination is studied in InN thin films using an ultrafast time-resolved photoluminescence apparatus. The decay rates are analyzed with nonlinear dependence of the photoluminescence intensity on the carrier concentration. The fitted radiative recombination coefficients at a temperature of 35 K are consistent with the theoretical prediction. The Auger rates are small at low carrier concentrations but increase quadratically with the carrier concentration. The Auger activation energies of 4.3 and 9.0 meV obtained from the temperature-dependent Auger coefficient indicate that Auger recombination is weakly dependent on temperature and is a phonon-assisted process.

• 出版日期2008-1-28
• 单位中山大学