Asymmetric GaAs n-type double delta-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field

作者：Rodriguez Magdaleno K A; Martinez Orozco J C; Rodriguez Vargas I; Mora Ramos M E; Duque C A^*

来源：Journal of Luminescence, 2014, 147: 77-84.

DOI：10.1016/j.jlumin.2013.10.057

• delta-doped quantum wells
• Electric field
• Nonlinear optical properties

In this work, the conduction band electron states and the associated intersubband-related linear and nonlinear optical absorption coefficient and relative refractive index change are calculated for an asymmetric double n-type delta-doped quantum well in a GaAs-matrix. The effects of an external applied static electric field are included. Values of the two-dimensional impurities density (N-2d) of each single delta-doped quantum well are taken to vary within the range of 1.0 x 10(12) to 7.0 x 10(12) cm(-2), consistent with the experimental data growth regime. The optical responses are reported as a function of the delta-doped impurities density and the applied electric field. It is shown that single electron states and the related optical quantities are significantly affected by the structural asymmetry of the double delta-doped quantum well system. In addition, a brief comparison with the free-carrier-related optical response is presented.

• 出版日期2014-3