Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

作者：Passi Vikram^*; Sodervall Ulf; Nilsson Bengt; Petersson Goran; Hagberg Mats; Kr*****ski Christophe; Dubois Emmanuel; Du Bois Bert; Raskin Jean Pierre

来源：Microelectronic Engineering, 2012, 95: 83-89.

DOI：10.1016/j.mee.2012.01.005

• Implantation of silicon oxide
• Vapor phase hydrofluoric acid release
• Wet release

Damages are created in a sacrificial layer of silicon-dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon-dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon-dioxide, the patterning of the sacrificial layer can be predicted by simulation.

• 出版日期2012-7