A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0

作者：Traversi G^*; Gaioni L; Manghisoni M; Ratti L; Re V

来源：Journal of Instrumentation, 2011, 6: C01010.

DOI：10.1088/1748-0221/6/01/C01010

• Pixelated detectors and associated VLSI electronics
• Analogue electronic circuits
• Front-end electronics for detector readout

Deep N-Well (DNW) Monolithic Active Pixel Sensors (MAPS) have been developed in the last few years with the aim of building monolithic sensors with similar functionalities as hybrid pixels systems. In these devices the triple well option, available in deep submicron processes, is exploited to implement analog and digital signal processing at the pixel level. Many prototypes have been fabricated in a planar (2D) 130nm CMOS technology. A new kind of DNW-MAPS, namely Apsel5_3D, which exploits the capabilities of vertical integration (3D) processes, is presented and discussed in this paper. The impact of 3D processes on the design and performance of DNW pixel sensors could be large, with significant advantages in terms of detection efficiency, pixel cell size and immunity to cross-talk, therefore complying with the severe constraints set by future HEP experiments.

• 出版日期2011-1