摘要

The concentration of divacancies in Si1-xGex solid solutions irradiated with 5-MeV electrons has been studied as a function of the germanium content in the 0 < x < 0.10 interval. It is demonstrated that the probability of the primary radiation-induced defect formation in the alloys bombarded with high-energy electrons weakly depends on the germanium content in the indicated interval.

  • 出版日期2007-12

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