An analytical model for the drain-source breakdown voltage of RF LDMOS power transistors with a Faraday shield

作者：Zhang Wenmin; Zhang Wei; Fu Jun; Wang Yudong

来源：Chinese Journal of Semiconductors, 2012, 33(4): 044001:1-044001:6.

DOI：10.1088/1674-4926/33/4/044001

• Characteristic parameter
• Device parameters
• Doping concentration
• Drift regions
• Electrostatic potentials
• Faraday shields
• Feedback capacitance
• LDMOS devices
• LDMOS transistors
• LDMOSFET
• Numerical device simulation
• On-resistance
• P-type
• Parabolic approximation
• Power transistors
• RF-LDMOS
• Surface electrical fields

An analytical model for the drain - source breakdown voltage of an RF LDMOS power transistor with a Faraday shield is derived on the basis of the solution of the 2D Poisson equation in a p-type epitaxial layer, as well as an n-type drift region by means of parabolic approximation of electrostatic potential. The model captures the influence of the p-type epitaxial layer doping concentration on the breakdown voltage, compared with the previously reported model, as well as the effect of the other device parameters. The analytical model is validated by comparing with a numerical device simulation and the measured characteristics of LDMOS transistors. Based on the model, optimization of LDMOS device parameters to achieve proper trade-off between the breakdown voltage and other characteristic parameters such as on-resistance and feedback capacitance is analyzed.

• 出版日期2012
• 单位清华大学; 天津大学