A Method for Fabricating Practically Channel-Corner-Free Polycrystalline Silicon Thin-Film Transistors

作者：Kang Il Suk^*; Park Cheol Ho; Kim Young Su; Song Nam Kyu; Joo Seung Ki; Seo Hyun Sang; Ahn Chi Won; Yang Jun Mo; Hwang Wook Jung

来源：IEEE Transactions on Electron Devices, 2011, 58(1): 271-275.

DOI：10.1109/TED.2010.2087340

• Channel corner effect
• metal-induced lateral crystallization (MILC)
• silicide
• thin-film transistor (TFT)

The influences of metal-induced laterally crystallized silicon channel corners on the performance and reliability of thin-film transistors (TFTs) were investigated. It was found that the TFT with the channel width, mostly applied to active matrix organic light-emitting diodes, had weak immunity to electrical stresses because of the heaviest weight of silicide-rich channel corner on the channel width by the geometric effect. The proposed TFT fabrication, which is composed of two consecutive adjacent step switches, makes TFTs practically channel-corner-free, resulting in high reliability. Moreover, it enables TFTs to have more current flow paths that maintain a high performance.

• 出版日期2011-1