A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistors with Vertical Gaussian Profile

作者：Zhang Guohe^*; Chen Kebin; Liang Feng

来源：Japanese Journal of Applied Physics, 2012, 51(2): 024301.

DOI：10.1143/JJAP.51.024301

A subthreshold current of fully-depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs) with vertical Gaussian profile is presented in the paper. The model is based on analytical approximated solution of two-dimensional Poissons'; equation and Boltzmann transport equation. The front and the back channel currents are effectively derived using a novel inversion layer model and the boundary conditions which take the nonuniform doping into account. The results are matched well with the numerical simulation results obtained by Sentaurus Technology Computer-Aided Design (TCAD). The model is believed to provide a deep physical insight and understanding of FD-SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.

• 出版日期2012-2
• 单位西安交通大学