Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

作者：Ryoo Kyung Chang^*; Oh Jeong Hoon; Jung Sunghun; Jeong Hongsik; Park Byung Gook

来源：Japanese Journal of Applied Physics, 2011, 50(4): 04DD15.

DOI：10.1143/JJAP.50.04DD15

We firstly propose a novel U-shape resistive cell structure which is the best fit for generating low power resistive random access memory (RRAM) with forming-less process. We find that irregular resistive switching behavior in the initial transition and the characteristics associated with it. Controlling the conducting filament (CF) dimension and deposition orientation of resistive material are expected to reduce the distribution and forming voltage, which enables low power RRAM to be feasible without forming state. Simple fabrication flow and device performances are also evaluated in the aspect of forming-less process. Numerical simulation is performed using random circuit breaker model (RCB) to confirm the proposed structure.

• 出版日期2011-4