Additive-Driven Assembly of Block Copolymer-Nanoparticle Hybrid Materials for Solution Processable Floating Gate Memory

作者：Wei Qingshuo; Lin Ying; Anderson Eric R; Briseno Alejandro L; Gido Samuel P; Watkins James J^*

来源：ACS Nano, 2012, 6(2): 1188-1194.

DOI：10.1021/nn203847r

• block copolymer
• nanoparticle
• hybrid material
• floating gate memory
• transistor

Floating gate memory devices were fabricated using well-ordered gold nanoparticle/block copolymer hybrid films as the charge trapping layers, SiO2 as the dielectric layer, and poly-(3-hexylthiophene) as the semiconductor layer. The charge trapping layer was prepared via self-assembly. The addition of Au nanoparticles that selectively hydrogen bond with pyridine In a poly(styrene-b-2-vinyl pyridine) block copolymer yields well-ordered hybrid materials at Au nanoparticle loadings up to 40 wt %. The characteristics of the memory window were tuned by simple control of the Au nanoparticle concentration. This approach enables the fabrication of well-ordered charge storage layers by solution processing, which Is extendable for the fabrications of large area and high density devices via roll-to-roll processing.

• 出版日期2012-2