Dry etch damage and recovery of gallium indium zinc oxide thin-film transistors with etch-back structures

作者：Park Jae Chul; Lee Ho Nyeon^*

来源：Displays, 2012, 33(3): 133-135.

DOI：10.1016/j.displa.2012.05.001

• Gallium indium zinc oxide
• Thin-film transistor
• Damage
• Recovery

We studied the degradation and recovery of gallium indium zinc oxide (GIZO) thin-film transistors (TFTs) with etch-back (EB) structures during the fabrication process. EB GIZO TFTs were degraded by a source/drain dry etch process that formed a conductive surface layer. Their switching performance was recovered using an O-2 ashing process that oxidized the conductive surface layer. In addition, a wet etch of the backside of the GIZO recovered the performance of the GIZO TFTs. EB GIZO TFTs with a field-effect mobility of 14.5 cm(2) V-1 s(-1) and a subthreshold swing of 0.1 V/dec were obtained without plasma treatment.

• 出版日期2012-7