Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures

作者：Kosiel Kamil^*; Kubacka Traczyk Justyna; Karbownik Piotr; Szerling Anna; Muszalski Jan; Bugajski Madej; Romanowski Przemek; Gaca Jaroslaw; Wojcik Marek

来源：Microelectronics Journal, 2009, 40(3): 565-569.

DOI：10.1016/j.mejo.2008.06.091

• Quantum cascade laser
• Unipolar devices
• Intersubband transitions
• GaAs/AlGaAs lasers
• Molecular-beam epitaxy
• Mid-infrared

The development of molecular-beam epitaxy (MBE) of GaAs/AlGaAs heterostructures, used for fabrication of similar to 9 mu m quantum cascade lasers (QCLs), is reported. The X-ray diffractometry (XRD) structural characterization, as an integral part of this process, is presented as well. Some conclusions, concerning the relationships between the used type of epitaxial technology and the necessity of special procedures of growth rate (V(gr)) calibration, are reached. The influence of the structural features of the QCL active region on the electronic band structure is calculated, and consequently some predictions as to the device electrical properties are presented as well.

• 出版日期2009-3