A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

作者：Makimoto T^*; Kumakura K; Maeda M; Yamamoto H; Horikoshi Y

来源：Journal of Crystal Growth, 2015, 425: 138-140.

DOI：10.1016/j.jacrysgro.2015.02.104

• Molecular beam epitaxy
• Nitrides
• AlON
• Sapphire
• Semiconducting III-V materials
• AlN

A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.

• 出版日期2015-9-1