Structural and electrical characteristics of n-InSb/p-GaAs heterojunction prepared by liquid phase epitaxy

作者：Farag A A M^*; Terra F S; Ashery A; Mansour A M

来源：Journal of Alloys and Compounds, 2014, 615: 604-609.

DOI：10.1016/j.jallcom.2014.06.058

• Liquid phase epitaxy
• n-InSb/p-GaAs
• Heterojunction

Thin films of n-InSb were successfully fabricated on p-GaAs single crystalline substrates by liquid phase epitaxy, LPE. The elemental composition of the prepared films was confirmed by energy dispersive X-ray (EDX) spectroscopy. The morphology and crystal structure of the film were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The electrical characteristics of liquid phase epitaxially grown n-InSb thin films on GaAs single crystal were investigated. The current density-voltage (J-V) characteristics of n-InSb/p-GaAs heterojunction diode in dark condition were measured at different temperatures in the temperature range 300-400 K. The device exhibited a rectifying property. The current in the prepared heterojunction was found to obey the thermionic emission model in the voltage range (V %26lt; 0.4 V) while in the voltage range (0.4 %26lt; V %26lt; 1.5) the current is space charge limited dominated by single trap distribution. The current density-voltage characteristics allow us to evaluate some characteristic parameters such as the series resistance, R-s, shunt resistance, R-sh, ideality factor, n, and the barrier height, Phi(b). The variation of 1/C-2 with voltage shows a straight line at high frequency indicating the formation of barrier between InSb and GaAs and other important parameters were calculated.

• 出版日期2014-12-5