A superconducting transistorlike device having good input-output isolation.

作者：Nevirkovets I P^*

来源：Applied Physics Letters, 2009, 95(5): 052505.

DOI：10.1063/1.3189283

• electrodes
• ferromagnetic materials
• insulators
• isolation technology
• superconducting junction devices

A multiterminal superconducting device with the S(1)IS(2)FIS(3) structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S(1)IS(2)) bias current on the injector junction (S(2)FIS(3)) current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.

• 出版日期2009-8-3
• 单位西北大学