摘要

The structural, electronic, and magnetic properties of adsorbed arsenene monolayer with a series of nonmetal atoms, including B, C, F, N, and O, are systematically investigated using first-principles calculations. Nonmagnetic behavior shows in the B-, F-, N-, and O-adsorbed systems. The magnetism has been observed in the case of C, which originated from the 2p electrons of C and its neighboring As 4p states. Meanwhile, these nonmagnetic elements can induce impurity channels around Fermi level, which reduce band gap of the systems. It implies that the B-, F-, N-, and O-adsorbed arsenene tune into narrow gap semiconductors without magnetic character. The X-adsorbed (X = B, C, F, N, and O) arsenene systems are promising candidates for spintronic devices in the future.