摘要

High-density arrays of well-aligned CuCl nano/micro-rods have been prepared on silicon wafers using a simple, catalyst-free vacuum vapor deposition (VVD) route. The phase structure and morphologies of CuCl products were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). On the basis of experimental results, the morphological evolution of CuCl microstructures was proposed, which occurs from nano/micro-rod arrays to thin film with a preferred orientation (1 1 1) plane. It has been found that the resulting polycrystalline films composed of continuous 3D grains or the 1D nanocrystals were strongly dependent on the reaction time and the temperature of substrate. In addition, the current-voltage characteristic under different gas atmospheres shows that the as prepared CuCl nanorod arrays are sensitive to ammonia at ppm level and the electrical conductivity is found to be weaker in ammonia than that in air.