Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se-2 Films

作者：Tahashi Masahiro^*; Iinuma Kenji; Goto Hideo; Yoshino Kenji; Takahashi Makoto; Ido Toshiyuki

来源：IEICE TRANSACTIONS ON ELECTRONICS, 2012, E95C(7): 1304-1306.

DOI：10.1587/transele.E95.C.1304

• copper indium gallium diselenide
• selenization
• crystal growth
• dimethylselenium

Polycrystalline Cu(In,Ga)Se-2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH3)(2)), which is a less hazardous Se source than H2Se gas. CIGS films were fabricated at various Se(CH3)(2) supply rates. We investigated the effect of the Se(CH3)(2) supply rate on the crystal phase and surface morphology of the films.

• 出版日期2012-7