Analysis and modelling of lateral heterostructure field-effect bipolar transistors

作者：Ooi Zi En^*; Singh Samarendra P; Ng Serene L G; Goh Gregory K L; Dodabalapur Ananth

来源：Organic Electronics, 2011, 12(11): 1794-1799.

DOI：10.1016/j.orgel.2011.06.026

• OFET
• Light-emitting transistor
• Zinc oxide
• LH-FEBT

Lateral heterostructure field-effect bipolar transistors (LH-FEBTs) are thin-film transistors that have a distinct heterojunction located roughly midway between the source and drain contacts, with a p-type semiconductor on one side of the junction, and an n-type semiconductor on the other. These devices have potential in display applications but are relatively new to the research community. In this paper, we describe the fabrication of a hybrid LH-FEBT using pentacene and ZnO as the p- and n-type semiconductors, respectively, and describe its unusual bell-shaped electrical transfer characteristics. Using an equivalent circuit approach, we analyse quantitatively how the main features of the current-voltage curves relate to semiconductor properties such as carrier mobility and threshold voltage - information that is essential to the design of such devices.

• 出版日期2011-11