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摘要
With the effects of equivalent oxide charges on flat-band voltage, a compact analytical threshold-voltage model for surrounding-gate MOSFETs with interface trapped charges is developed based on the parabolic potential approach. The model shows how interface charge density, damaged zone, oxide thickness, and diameter of silicon body affect the threshold voltage. The model is verified by a 3-D device simulator and can be used to explore the hot-carrier-induced threshold-voltage behavior of surrounding-gate MOSFETs for its memory device application.
- 出版日期2010-8
