科研之友
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摘要
Resistance switching phenomena in metal oxides shall play an important role in next-generation non-volatile memory devices. Although it has been reported in the literature that the current flow in oxides in high-conductivity state occurs through localized filaments, reports on experimental evidence for current flow through filaments is limited. In this work, we use scanning tunneling microscopy to show the formation and/or rupture of nano filaments in Pt/Nb2O5/TiN system during resistive switching. SET/RESET operations were studied at nanoscale using by a Pt-Ir tip.
- 出版日期2012-4
