Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

作者：Toyoda S^*; Kamada H; Tanimura T; Kumigashira H; Oshima M; Ohtsuka T; Hata Y; Niwa M

来源：Applied Physics Letters, 2010, 96(4): 042905.

DOI：10.1063/1.3298355

• chemical shift
• hafnium compounds
• high-k dielectric thin films
• lanthanum compounds
• MIS structures
• photoelectron spectra
• rapid thermal annealing
• silicon compounds
• titanium compounds

We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high-k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high-k/SiO2 interface, which is well related to the V-th shift based on the interface dipole model.

• 出版日期2010-1-25