Design and Simulation of Nano-Logic Gates Based on p-n Junction with Carbon Nanotube Electrodes

作者：Rodrigues Mayara P; de Sousa Mario Edson S; dos Reis Marcos A L^*

来源：Journal of Computational and Theoretical Nanoscience, 2015, 12(8): 1802-1806.

DOI：10.1166/jctn.2015.3961

• Carbon Nanotube
• p-n Junction
• Logic Cell

This paper reports a design and simulation of a logic cell based on p-n junction linked at sidewall of Carbon Nanotube (CNT) electrodes. The novel concept shows both sidewall functionalized armchair CNTs linked themselves through biphenyl with electron donor and electron acceptor groups. Electrical simulation results show Negative Differential Resistances (NDRs) by tunnel effect that originates the 0-bit and 1-bit with an on/off current ratio of 3.0 under low voltage, as well as the influence of temperature on the current peak was analyzed when the device was heated from 27 degrees C to 100 degrees C. This logic cell array will provide a new insight for building nanotube interconnections and unit for logic gates.

• 出版日期2015-8