Nitrogen Doped n-Type CdS Nanoribbons with Tunable Electrical and Photoelectrical Properties

作者：Wu, Bo; Jiang, Yang^*; Wu, Di; Li, Shanying; Wang, Li; Yu, Yongqing; Wang, Zhuangbing; Jie, Jiansheng

来源：Journal of Nanoscience and Nanotechnology, 2011, 11(3): 2003-2011.

DOI：10.1166/jnn.2011.3550

• Field-Effect Transistors
• Carrier Transfer Properties
• Photoconductor
• CdS Nanoribbons
• Nitrogen Doped

Single-crystal nitrogen doped CdS nanoribbons (NRs) with wurtzite structure were synthesized in ammonia atmosphere via a thermal evaporation deposition route. X-ray diffraction patterns reveal a significant contraction of the lattice constants due to the incorporation of nitrogen. Temperature-varied photoluminescence spectra of CdS:N NRs exhibit spectral features near the band edge, which can be ascribed to free excition and neutral acceptor-bound excition emissions. Electrical and photoelectrical properties of the CdS:N NRs were systemically studied by constructing the field-effect transistors based on individual NRs. The conductivity of the NRs can be tuned by two orders of magnitude by controlling the N doping concentration. Moreover, by post-annealing, the device performance is remarkably improved, in particular, the mobility of the CdS:N NRs is increased by nearly three orders of magnitude from similar to 10(-1) to hundreds of cm(2)/Vs. I-on/I-off ratio of the annealed device reaches over 10(4). Photoconductive properties of the CdS:N NRs were also studied. The doped NRs show high sensitivity to the light with energy larger than band-gap and the response amplitude and speed depend on the doping concentration.

• 出版日期2011-3
• 单位合肥工业大学; 河南城建学院