摘要
Electronic stopping power of helium ions in a semiconductor material ZnSe has been investigated through non-adiabatic dynamics simulations at energies of a few keV under channeling condition. The stopping power is predicted to be proportional to velocity for the trajectory along middle axis of a < 110 > channel, as expected for the linear response theory accounts for election-hole pair creation. While for the off-center channeling trajectory, a counterintuitive of electronic stopping power versus velocity is observed. Our study, presented herein, finds a non-trivial connection between charge transfer and the force experienced by the projectile. Charge transfer can produce, throughout the collision process, additional force by continuously forming and breaking instantaneous chemical bonds between the projectile and the neighboring host atoms.
- 出版日期2018-7-1
- 单位北京市辐射中心; 北京师范大学; 北京理工大学; 北京应用物理与计算数学研究所; 西北核技术研究所