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摘要
This paper reports on fabrication and characterization of Schottky barrier diodes, which were obtained by Schottky contacts between aluminum electrodes and phosphorous-doped single crystalline silicon layer of silicon-on-insulator (SOI) structure. Our photodetectors (PDs) with this structure have advantages, which are simple fabrication process and compatible with complementary metal-oxide-semiconductor devices. The detector performed with the highest external quantum efficiency of 0.397 at 360 nm in ultraviolet spectral range and compared with other devices in previously reported papers. The light sensitivity of 116.2 mV/mW.cm(2) and stable response time of similar to 1.3 ms were achieved at 3 V applied voltage. In addition, operation of an SoI-based 1 x 6 PD array was demonstrated to verify the availability of ultraviolet line-scanner.
- 出版日期2015-3
