A new drain current model for amorphous IGZO thin film transistors

作者：Qiang, Lei^*; Yao, Ruo He

来源：The European Physical Journal - Applied Physics, 2015, 70(1): 10101.

DOI：10.1051/epjap/2015150032

• Amorphousingazno (a-igzo)
• Conduction Mechanism
• Current characteristic
• Drain current models
• Electrical behaviors
• Field-effect mobilities
• Generalized Equations
• Semiconducting layer

Based on the conduction mechanisms of amorphous InGaZnO (a-IGZO) thin film transistors, generalized equations are derived which permit the determination of drain current characteristics. A geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. It is suggested that a drain current model that includes different charge transports gives a consistent and accurate description of the electrical behavior. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin-film circuits.

• 出版日期2015-4
• 单位华南理工大学