Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method

作者：Zhao Dan; Liu Zhangcheng; Zhang Xiaofan; Zhang Minghui; Wang Yanfeng; Shao Guoqing; Zhang Jingwen; Fan Shuwei; Wang Wei; Wang Hongxing

来源：Applied Physics Letters, 2018, 112(9): 092102.

DOI：10.1063/1.5020317

In this study, diamond pseudo-vertical architecture Schottky barrier diodes (PVSBDs) through the patterning tungsten growth method have been investigated. The forward current density is 16A/cm(2) at 5V, and a rectification ratio is more than 5 orders of magnitude at +/- 5V for diamond PVSBD. The reverse breakdown voltage is 640 V, and the corresponding electrical field is 4.57MV/cm. These results are obtained by patterning tungsten (W) on the diamond surface as a blocking layer and growing a diamond epitaxial layer on the uncovered zone. A W/diamond ohmic contact was formed during the diamond epitaxial layer growth process. An aluminum film was used as a Schottky contact. Overall, the results illustrate that W patterned growth to fabricate PVSBD is efficient. Published by AIP Publishing.

• 出版日期2018-2-26
• 单位西安交通大学