MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells

作者：Feifel Markus^*; Ohlmann Jens; Benick Jan; Rachow Thomas; Janz Stefan; Hermle Martin; Dimroth Frank; Belz Juergen; Beyer Andreas; Volz Kerstin; Lackner David

来源：IEEE Journal of Photovoltaics, 2017, 7(2): 502-507.

DOI：10.1109/JPHOTOV.2016.2642645

• Epitaxial layer
• gallium phosphide (GaP) deposition
• heterojunction
• metal-organic vapor phase epitaxy (MOVPE)
• semiconductor materials
• silicon solar cell
• III-V on silicon

Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p-type silicon heterojunction solar cells which have been prepared by direct growth viametal-organic vapor phase epitaxy (MOVPE). The devices show very promising results in quantum efficiency and current density. However, the open-circuit voltage of 560 mV is far from ideal. The investigation of two different nucleation processes reveals a significant influence of the antiphase domain density at the GaP/Si interface on the open-circuit voltage.

• 出版日期2017-3