Phase transition current of antiferroelectric (Pb0.97La0.02)(Zr0.95Ti0.05)O-3 thick films under thermo-electric coupled field

作者：An, Kun; Li, Peiqing; Chen, Donghong; Chou, Xiujian^*; Xue, Chenyang; Liu, Jun; Zhang, Wendong

来源：Solid State Communications, 2014, 180: 64-67.

DOI：10.1016/j.ssc.2013.11.018

• Antiferroelectric
• Thick films
• Phase transition current
• Thermo-electric coupled field

Antiferroelectric (Pb, La)(Zr, Ti)O-3 multilayer thick films with thickness of 3817 nm were fabricated by sol-gel processing on Pt(111)/Ti/SiO2/Si(100) substrates. The characteristics of the phase transition current induced by temperature and transient pulse electric field were further investigated in detail. It showed that the phase transition current density was about 1.25 x 10(-6) A/cm(2) in the thermo-electric coupled field, which was 10 times smaller than that in a single temperature or electric field. In addition, the transient phase transition current density induced by pulse voltage was up to 2.48 x 10(-5) A/cm(2), which could be used as the trigger signals in sensor and micro switch in the complicated circumstance. At the same Lime, the results showed that the films had good reproducibility and stability by many repeated experiments. These results were very important for the antiferroclectric materials applied on micro electromechanical systems (MEMS) devices.

• 出版日期2014-2
• 单位中北大学