A 3.1-10.6 GHz ultra-wideband low noise amplifier with 13-dB gain, 3.4-dB noise figure, and consumes only 12.9 mW of DC power

作者：Fang Chao^*; Law Choi L; Hwang James

来源：IEEE Microwave and Wireless Components Letters, 2007, 17(4): 295-297.

DOI：10.1109/LMWC.2007.892984

• current sharing
• feedback
• low noise amplifier (LNA)
• pseudomorphic high electron mobility transistor (pHEMT)
• ultra-wideband (UWB)

A 3.1-10.6 GHz ultra-wideband two-stage pseudomorphit high electron mobility transistor low noise amplifier is presented. The first stage of the amplifier employs a resistive shunt feedback topology and two T-network sections to provide wideband input matching to a 50-Omega antenna. The current-sharing dc bias topology is used to ensure the low power consumption under fixed 3-V battery operation. The amplifier exhibits state of the art performance consuming only 12.9 mW of dc power with a power gain of 12.5 dB, +/- 0.5 dB gain flatness, and 3.4-4.0 dB noise figure. Input match is better than - 12.0 dB, output match is better than - 15 dB, and group delay is 184 pS +/- 28 pS.

• 出版日期2007-4
• 单位南阳理工学院